Title :
Die cracking in flip-chip-on-board assembly
Author :
Hu, Kai X. ; Yeh, Chao-pin ; Doot, Bob ; Skipor, Andrew F. ; Wyatt, Karl W.
Author_Institution :
Motorola Inc., Schaumburg, IL, USA
Abstract :
The die cracking in a flip-chip-on-board (FCOB) assembly occurs very often during the solder reflow process and the fracture path follows a straight downward crack extension and then kinks at a certain depth. Such a fracture path selection in FCOB structures is determined here based on a mode-I domination criterion. This is done by solving the corresponding problem of a kinked crack in a FCOB structure for a series of kinking angles. The numerical results indicate that the energy release rate maximum assumes initially at a zero-degree angle, which points to the straight downward extension in the thickness direction, and then shifts to a large angle, which corresponds to kinking. The kinking angle and the depth at which the kink starts have been predicted and compared agreeably with cross sectioning of failed samples from a manufacturing floor. The maximum allowable manufacturing defect size, below which the die cracking can be prevented, is then determined by a beam theory. The analysis suggests that in a typical FCOB structure a defect size of more than 35 micron will result in die cracking failure after solder reflow. The numerical results also reveal that a good tolerance of defects can be achieved by limiting the board thickness to be less than twice of the die
Keywords :
cracks; flip-chip devices; fracture; integrated circuit packaging; microassembling; reflow soldering; thermal stress cracking; FCOB structures; beam theory; die cracking; direct die attach; energy release rate maximum; flip-chip-on-board assembly; fracture path selection; kinked crack; kinking angles; mode-I domination criterion; solder reflow process; Assembly; Chaos; Degradation; Electronics packaging; Failure analysis; Flip chip; Leak detection; Manufacturing; Moisture; Surface cracks;
Conference_Titel :
Electronic Components and Technology Conference, 1995. Proceedings., 45th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2736-5
DOI :
10.1109/ECTC.1995.514398