Title :
Experiments and 2D-simulations for quasi-saturation effect in ponver VDMOS transistors
Author :
Park, Chan-Kwang ; Lee, Kwyro
Author_Institution :
Korea Advanced Institute of Science and Technology
Keywords :
Boron; Critical current; Degradation; Electron mobility; Epitaxial layers; Fabrication; Testing; Transconductance; Transistors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
DOI :
10.1109/ISPSD.1990.991086
