DocumentCode

2354560

Title

High frequency 6000 V gate GTOs with buried gate structure

Author

Ogura, T. ; Nakagawa, A. ; Atsuta, M. ; Kamei, Y. ; Takigami, K.

Author_Institution

Toshiba Corp.

fYear

1990

fDate

1990

Firstpage

252

Lastpage

255

Keywords

Anodes; Doping profiles; Frequency; Impurities; Inverters; Research and development; Switching loss; Tail; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on

ISSN

1063-6854

Type

conf

DOI

10.1109/ISPSD.1990.991092

Filename

991092