DocumentCode

2354595

Title

Switching performances of enhanced gain bipolar mode field effect transistor (BMFET)

Author

Busatto, G. ; Ferla, G. ; Fallica, P.G. ; Musumeci, S.

Author_Institution

I.R.E.C.E. - C.N.R.

fYear

1990

fDate

1990

Firstpage

270

Lastpage

276

Keywords

Boron; Doping; Epitaxial layers; FETs; Insulated gate bipolar transistors; MOSFETs; Performance gain; Power generation; Shape; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on

ISSN

1063-6854

Type

conf

DOI

10.1109/ISPSD.1990.991095

Filename

991095