Optimization of CMP process for TSV reveal in consideration of critical defect

Author

Donghoon Lee ; DoHyeong Kim ; SeungChul Han ; Joohyun Kim ; Jungsoo Park ; BoRa Jang ; YoungSuk Chung ; SeongMin Seo ; YongSang Kim ; ChoonHeung Lee

Author_Institution

Amkor Technol. Korea Inc., Seoul, South Korea

fYear

2014

fDate

27-30 May 2014

Firstpage

1816

Lastpage

1821

Abstract

In this paper, we discuss the optimization of CMP process for mid-end-of-line (MEOL). TSV breaking and blister are the two types of critical defects during CMP. TSV breaking occurs due to high principle stress at the bottom of TSV and blister occurs because of adhesive deformation. Therefore, we suggest a new process schematic for CMP and the use of thermally stable adhesive material to prevent these critical defects. Later we optimized CMP process in consideration of via height, throughput and non-uniformity without any critical defects. TSV was successfully revealed without TSV breaking. The result shows less 10 % WIWNU, WIDNU and less 10 nm TSV dishing.

Keywords

chemical mechanical polishing; integrated circuit packaging; optimisation; three-dimensional integrated circuits; CMP process; MEOL; TSV blister; TSV breaking; adhesive deformation; critical defect; high principle stress; mid-end-of-line; thermally stable adhesive material; Copper; Optimization; Passivation; Slurries; Stress; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th

Conference_Location

Orlando, FL

Type

conf

DOI

10.1109/ECTC.2014.6897545

Filename

6897545