DocumentCode
2354780
Title
Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W
Author
Paschke, K. ; Sumpf, B. ; Dittmar, F. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Schwertfeger, S. ; Wenzel, H. ; Tränkle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
43
Lastpage
44
Abstract
High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.
Keywords
laser beams; light diffraction; ridge waveguides; semiconductor lasers; waveguide lasers; 6.7 W; 980 nm; electrically separated straight sections; guided ridge waveguide; high beam quality; nearly-diffraction limited lasers; tapered diode lasers; tapered sections; Diffraction; Diode lasers; Laser beams; Laser excitation; Optical design; Power generation; Power lasers; Power measurement; Pump lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382746
Filename
1382746
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