Title :
1.28 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition
Author :
Tatebayashi, Jun ; Hatori, Nobuaki ; Ishida, Mitsuru ; Ebe, Hiroji ; Sudou, Hisao ; Kuramata, Akito ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al0.4Ga0.6As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 μm cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; annealing; claddings; gallium arsenide; indium compounds; quantum dot lasers; self-assembly; semiconductor growth; 1.28 mum; 20 degC; Al/sub 0.4/Ga/sub 0.6/As; AlGaAs cladding layer; InAs-AlGaAs; InAs/GaAs lasers; continuous-wave lasing; long-wavelength lasing; low temperature growth; metalorganic chemical vapor deposition; post-growth annealing; quantum dot lasers; room temperature; self-assembled lasers; stacked InAs/GaAs lasers; Annealing; Chemical lasers; Chemical vapor deposition; Fiber lasers; Gallium arsenide; MOCVD; Quantum dot lasers; Surface emitting lasers; Temperature dependence; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382752
