Title :
Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers
Author :
Pyun, S.H. ; Lee, S.H. ; Lee, I.C. ; Jeong, Weon G. ; Jang, J.W. ; Stevenson, R. ; Dapkus, P.Daniel ; Lee, D. ; Lee, J.H. ; Oh, D.K.
Author_Institution :
Dept. of Mater. Eng., Sung Kyun Kwan Univ., Suwon, South Korea
Abstract :
Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot laser at 1.44 μm with Ith of 62.5 mA was achieved with a ridge waveguide laser with 2 μm ridge width and a cavity length of 400 μm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; quantum dot lasers; ridge waveguides; waveguide lasers; 1.44 mum; 2 mum; 20 degC; 400 mum; 62.5 mA; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/lnP lasers; continuous-wave operation; laser cavity; quantum dot lasers; ridge waveguide laser; room temperature operation; Fiber lasers; Indium gallium arsenide; Indium phosphide; Laser theory; Luminescence; Optical pulses; Quantum dot lasers; Temperature; US Department of Transportation; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382754
