DocumentCode
2355028
Title
GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence
Author
Bessho, Y. ; Kano, T. ; Yamaguchi, T. ; Inoue, D. ; Nomura, Y. ; Shono, M.
Author_Institution
Mater. & Devices Dev. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
65
Lastpage
66
Abstract
We have developed GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence by optimizing the optical confinement in the active layer. A small aspect ratio of 1.3 and a high output power of 200 mW with kink-free operation have been achieved.
Keywords
III-V semiconductors; gallium compounds; laser beams; optical disc storage; semiconductor lasers; 200 mW; GaN; GaN-based laser diodes; beam divergence; blue-violet laser diodes; high-power laser diodes; kink-free operation; optical confinement; optical disc systems; small aspect ratio; Aluminum gallium nitride; Diode lasers; High speed optical techniques; Laser beams; Light sources; Optical recording; Optical waveguides; Power generation; Space vector pulse width modulation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382757
Filename
1382757
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