Title :
High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD
Author :
Mitomo, J. ; Hino, T. ; Hirano, Y. ; Narui, H.
Author_Institution :
Sony Corp. Mater. Labs., Kanagawa, Japan
Abstract :
By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 μm have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1 mW; 1.3 mum; 10000 hour; 180 K; 20 degC; 25 mA; GaInNAs-GaAs; GaInNAs/GaAs laser diode; MOCVD; continuous-wave operation; growth-rate dependence; high characteristic temperature; laser diodes; long device lifetime; low threshold current; narrow-ridge laser diodes; narrow-ridge waveguide; room temperature; semiconductor growth; Diode lasers; Gallium arsenide; Laboratories; MOCVD; Optical materials; Optical waveguides; Quantum well devices; Substrates; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382760
