Title :
Room temperature operation of InAs-quantum-dot laser utilizing GaAs-photonic-crystal-slab-based line-defect waveguide with optical pump
Author :
Sugimoto, Y. ; Inoue, K. ; Ikeda, N. ; Ohkouch, S. ; Tanaka, Y. ; Nakamura, Y. ; Nakamura, H. ; Sasaki, H. ; Ishida, K. ; Asakawa, K.
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
Room temperature operation of lasing from optically-pumped InAs quantum dots embedded in a line defect waveguide in a two-dimensional air-bridge type GaAs-photonic crystal slab is demonstrated. The lasing is found to occur without Fabry-Perot mirrors, and also without any reflection at the sample edge. A distributed feedback mechanism at the band edge with a vanishingly-small group-velocity is responsible for the present lasing.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical pumping; optical waveguides; photonic crystals; quantum dot lasers; 20 degC; GaAs; GaAs-photonic-crystal-slab; InAs; InAs-quantum-dot laser; band edge; distributed feedback mechanism; line-defect waveguide; optical pump; room temperature operation; vanishingly-small group-velocity; Fabry-Perot; Laser excitation; Optical feedback; Optical pumping; Optical waveguides; Pump lasers; Quantum dot lasers; Slabs; Temperature; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382765
