Title :
A ballistic nanoelectronic device simulator
Author :
Huo, Dennis ; Yu, Qiaoyan ; Ampadu, Paul
Author_Institution :
Dept. of Electr. & Comput. Eng., Rochester Univ., Rochester, NY
Abstract :
A multi-purpose simulator for ballistic nanoelectronic devices, based on classical mechanics of electrons at the Fermi level, has been successfully implemented. Current-voltage characteristics and magnetoresistance phenomena consistent with published experimental data have been observed. Based on simulator results, device design guidelines for a new type of transistor which operates on ballistic transport principles are presented.
Keywords :
Monte Carlo methods; ballistics; design engineering; magnetoresistance; nanoelectronics; Monte Carlo device simulation; ballistic nanoelectronic device simulator; ballistic transport principles; device design guidelines; magnetoresistance phenomena; Nanoscale devices; Monte Carlo device simulation; ballistic transport; nanoelectronic device;
Conference_Titel :
Nanoscale Architectures, 2007. NANOSARCH 2007. IEEE International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-1790-2
Electronic_ISBN :
978-1-4244-1791-9
DOI :
10.1109/NANOARCH.2007.4400856
