Title :
Influence of growth temperature on defect density in 1.3μm GaInNAs-based lasers
Author :
Fehse, R. ; Sweeney, S.J. ; Adams, A.R. ; McConville, D. ; Riecher, H. ; Geelhaar, L.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford, UK
Abstract :
We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3 μm GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.
Keywords :
III-V semiconductors; crystal defects; current density; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; wide band gap semiconductors; 1.3 mum; GaInNAs; GaInNAs-based lasers; defect density; growth temperature; monomolecular recombination current; threshold current density; Current density; Electrons; Fiber lasers; Molecular beam epitaxial growth; Radiative recombination; Spontaneous emission; Surface emitting lasers; Temperature sensors; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382767
