Title :
Reducing internal field effects with high aluminum AlGaN quantum wells
Author :
Chow, W.W. ; Wieczorek, S. ; Fischer, A.J. ; Crawford, M.H. ; Allerman, A.A. ; Lee, S.R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.
Keywords :
aluminium compounds; gallium compounds; ground states; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; AlGaN quantum wells; aluminum concentration; heavy hole-crystal field split hole ground state transition; internal field effects reduction; Aluminum gallium nitride; Biomedical optical imaging; Charge carrier processes; Chemical lasers; Laser transitions; Light emitting diodes; Quantum well devices; Quantum well lasers; Quantum wells; Stationary state;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382769
