DocumentCode :
2355346
Title :
Dephasing effects on laser gain in shallow and deep semiconductor quantum dots
Author :
Chow, W.W. ; Huffaker, D.L.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2004
fDate :
25-25 Sept. 2004
Firstpage :
91
Lastpage :
92
Abstract :
Effects of excitation-induced dephasing are investigated for semiconductor quantum-dot lasers.
Keywords :
quantum dot lasers; deep semiconductor quantum dot lasers; excitation-induced dephasing; laser gain; shallow semiconductor quantum dot lasers; Charge carrier density; Laser excitation; Optical saturation; Optical scattering; Particle scattering; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
Type :
conf
DOI :
10.1109/ISLC.2004.1382770
Filename :
1382770
Link To Document :
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