Title :
Nano size cerium hydroxide slurry for scratch-free CMP process
Author :
Tanaka, T. ; Minami, Hisataka ; Akutsu, Toshiaki ; Iwano, Tomohiro ; Hidaka, Takahiro ; Shinoda, Takashi ; Sakurai, Haruaki ; Nobe, Shigeru
Author_Institution :
Adv. Integrated Mater. Bus. Sector, Hitachi Chem. Co., Ltd., Hitachi, Japan
Abstract :
We report recent progress in a novel cerium hydroxide polishing slurry with particle size of about 5 nm nano size cerium hydroxide (NSC) abrasive. NSC has succeeded in omitting particles over 1 μm, and in reducing scratches to 1/30 of those with calcined ceria slurry. Even though, NSC maintains oxide removal rate similar to conventional ceria. Mixing NSC with the specific additives brought out tunable polishing of SiO2, SiN, and poly-Si.
Keywords :
cerium; chemical mechanical polishing; silicon compounds; Ce; NSC; SiN; SiO2; cerium hydroxide polishing slurry; nanosize cerium hydroxide slurry; oxide removal rate; scratch-free CMP process; Additives; Atmospheric measurements; Cerium; Films; Particle measurements; Silicon compounds; Slurries;
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4799-5556-5
DOI :
10.1109/ICPT.2014.7017236
