Title :
High performance 1.27 μm InGaAs:Sb-GaAsP quantum wells vertical cavity surface emitting laser
Author :
Kuo, Hao-Chung ; Chang, Ya-Hsien ; Lai, Fang-I ; Lee, Po-Tsung ; Wang, Shing-Chung
Author_Institution :
Inst. of Electro-opt. Eng., Nat. Chiao Tung Univ., Hsin-Chu, Taiwan
Abstract :
High performance 1.27 μm InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 °C. High modulation bandwidth of 10.1 (8.8) GHz at 25 °C (70 °C) and bias current 6 mA are demonstrated.
Keywords :
III-V semiconductors; antimony; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; surface emitting lasers; thermal stability; 1.27 mum; 1.8 to 1.1 mA; 10.1 GHz; 25 degC; 6 mA; 70 degC; 8.8 GHz; InGaAs:Sb-GaAsP; InGaAs:Sb-GaAsP quantum well vertical cavity surface emitting laser; modulation bandwidth; slope efficiency; temperature stability; threshold current; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Lasers and electrooptics; Optical surface waves; Quantum well lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382773
