Title :
Bandgap difference current confinement GaInNAs lasers
Author :
Katsuyama, Tsukuru ; Hashimoto, Jun-ichi ; Saito, Tadashi ; Yamada, Takashi ; Ishizuka, Takashi ; Tsuji, Yukihiro ; Koyama, Kenji ; Iguchi, Yasuhiro ; Fujii, Kosuke ; Takagishi, Shigenori ; Ishida, Akira
Author_Institution :
Transmission Device R&D Lab., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
Operation of real index guided GaInNAs quantum well lasers consisting of simple current confinement structure using bandgap difference is presented. The current confinement method is found to be useful to fabricate not only a single low cost optical devices but also photonic integrated circuit consisting with various waveguides and active devices.
Keywords :
III-V semiconductors; energy gap; quantum well lasers; wide band gap semiconductors; GaInNAs-GaAs; bandgap difference current confinement; real index guided GaInNAs quantum well lasers; Carrier confinement; Electrons; Gallium arsenide; Optical devices; Optical waveguides; Photonic band gap; Quantum well lasers; Research and development; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382774
