• DocumentCode
    2355480
  • Title

    Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90°C QW temperature and 16 mW/μm

  • Author

    Silfvenius, C. ; Blixt, Peter ; Lindstrom, Carsten ; Feitisch, A.

  • Author_Institution
    Comlase AB, Stockholm, Sweden
  • fYear
    2004
  • fDate
    25-25 Sept. 2004
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW/μm, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 °C QW temperature and 2500 A/cm2 current density. No devices failed.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser modes; laser reliability; laser transitions; life testing; passivation; quantum well lasers; semiconductor device reliability; semiconductor device testing; thermal stresses; 2000 h; 805 nm; 90 degC; AlInGaAs; QW temperature; current density; degradation rate; life testing; multimode AlInGaAs lasers; nitride passivation; stress; Bars; Degradation; Life testing; Passivation; Power lasers; Pump lasers; Semiconductor lasers; Solid lasers; Surface emitting lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
  • Conference_Location
    Matsue-shi
  • Print_ISBN
    0-7803-8627-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2004.1382776
  • Filename
    1382776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2355480