Title :
Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90°C QW temperature and 16 mW/μm
Author :
Silfvenius, C. ; Blixt, Peter ; Lindstrom, Carsten ; Feitisch, A.
Author_Institution :
Comlase AB, Stockholm, Sweden
Abstract :
A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW/μm, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 °C QW temperature and 2500 A/cm2 current density. No devices failed.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser modes; laser reliability; laser transitions; life testing; passivation; quantum well lasers; semiconductor device reliability; semiconductor device testing; thermal stresses; 2000 h; 805 nm; 90 degC; AlInGaAs; QW temperature; current density; degradation rate; life testing; multimode AlInGaAs lasers; nitride passivation; stress; Bars; Degradation; Life testing; Passivation; Power lasers; Pump lasers; Semiconductor lasers; Solid lasers; Surface emitting lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382776
