• DocumentCode
    235571
  • Title

    Effects of colloidal silica on the CMP of Molybdenum in the alkaline slurry

  • Author

    Hui Feng ; Li-Ao Cao ; Ji-Yu Feng ; Xin-Ping Qu

  • Author_Institution
    Sch. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2014
  • fDate
    19-21 Nov. 2014
  • Firstpage
    66
  • Lastpage
    69
  • Abstract
    The effects of colloidal silica on the CMP of Molybdenum (Mo) are investigated in different slurries with H2O2 as oxidizer. It is found that both RR (removal rate) and SER (static etching rate) decrease after adding colloidal silica into the alkaline slurry. The adsorption between the colloidal silica particles and Mo film is observed. Raman spectra show that silicomolybdic acid forms from reaction between colloidal silica and Mo oxide. The mechanism of colloidal silica´s inhibition on Mo removal is discussed.
  • Keywords
    Raman spectra; chemical mechanical polishing; colloids; hydrogen compounds; molybdenum; slurries; CMP; H2O2; Mo; Mo film; RR; Raman spectra; SER; alkaline slurry; colloidal silica particles; molybdenum; oxidizer; removal rate; silicomolybdic acid; static etching rate; Abrasives; Chemicals; Films; Silicon; Silicon compounds; Slurries; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2014 International Conference on
  • Conference_Location
    Kobe
  • Print_ISBN
    978-1-4799-5556-5
  • Type

    conf

  • DOI
    10.1109/ICPT.2014.7017248
  • Filename
    7017248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235571