DocumentCode :
235571
Title :
Effects of colloidal silica on the CMP of Molybdenum in the alkaline slurry
Author :
Hui Feng ; Li-Ao Cao ; Ji-Yu Feng ; Xin-Ping Qu
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai, China
fYear :
2014
fDate :
19-21 Nov. 2014
Firstpage :
66
Lastpage :
69
Abstract :
The effects of colloidal silica on the CMP of Molybdenum (Mo) are investigated in different slurries with H2O2 as oxidizer. It is found that both RR (removal rate) and SER (static etching rate) decrease after adding colloidal silica into the alkaline slurry. The adsorption between the colloidal silica particles and Mo film is observed. Raman spectra show that silicomolybdic acid forms from reaction between colloidal silica and Mo oxide. The mechanism of colloidal silica´s inhibition on Mo removal is discussed.
Keywords :
Raman spectra; chemical mechanical polishing; colloids; hydrogen compounds; molybdenum; slurries; CMP; H2O2; Mo; Mo film; RR; Raman spectra; SER; alkaline slurry; colloidal silica particles; molybdenum; oxidizer; removal rate; silicomolybdic acid; static etching rate; Abrasives; Chemicals; Films; Silicon; Silicon compounds; Slurries; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4799-5556-5
Type :
conf
DOI :
10.1109/ICPT.2014.7017248
Filename :
7017248
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=235571
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