Title :
Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices
Author :
Bauer, F. ; Stockmeier, T. ; Lendenmann, H. ; Dettmer, H. ; Fichtner, W.
Author_Institution :
ABB Corporate Research
Keywords :
Fabrication; Insulated gate bipolar transistors; Insulation; Loss measurement; Low voltage; MOSFETs; Power semiconductor switches; Silicon; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991231
