• DocumentCode
    2355932
  • Title

    Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices

  • Author

    Bauer, F. ; Stockmeier, T. ; Lendenmann, H. ; Dettmer, H. ; Fichtner, W.

  • Author_Institution
    ABB Corporate Research
  • fYear
    1992
  • fDate
    1992
  • Firstpage
    22
  • Lastpage
    27
  • Keywords
    Fabrication; Insulated gate bipolar transistors; Insulation; Loss measurement; Low voltage; MOSFETs; Power semiconductor switches; Silicon; Thyristors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
  • Type

    conf

  • DOI
    10.1109/ISPSD.1992.991231
  • Filename
    991231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2355932