DocumentCode
2355944
Title
Double gate MOS device having IGBT and MCT performances
Author
Momota, Seiji ; Otsuki, Masahito ; Sakurai, Kenya
Author_Institution
Fuji Electric Co. Ltd.
fYear
1992
fDate
1992
Firstpage
28
Lastpage
33
Keywords
Bipolar transistors; Current density; Frequency; Insulated gate bipolar transistors; MOS devices; MOSFETs; Numerical simulation; Power semiconductor switches; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991232
Filename
991232
Link To Document