Title :
A study on IGBT´s steady state SOA with newly developed simulation
Author :
Nakayama, Kazuya ; Nakagawa, Akio
Author_Institution :
Toshiba Research and Development Center
Keywords :
Bipolar transistors; Charge carrier processes; Computational modeling; Controllability; Current density; Impact ionization; Insulated gate bipolar transistors; Semiconductor optical amplifiers; Steady-state; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991233
