Title :
P2O-9 Wet Etching of LGS crystals in H3PO4:H2O - Characterization of Anisotropy and Simulation
Author :
Leblois, T.G. ; Tellier, C.R. ; Akil, M.
Author_Institution :
Dept. Electronique Chronometrie Piezoelectricite, InstitutFEMTO-ST, Besancon
Abstract :
This paper presents new results on the anisotropic chemical etching of LGS crystals in an acidic solution and focuses on orientation effects in 2D etching shapes (surface profiles, out-of-roundness profiles). Experimental results are analyzed in terms of a kinematic and tensorial model for the anisotropic dissolution. The dissolution constants that are determined from experiments are used as database for the simulator TENSOSIM. Simulated etching shapes are found to be in agreement with experimental shapes. The simulator with the proposed database is thus a convenient tool to design new LGS mechanical microstructures
Keywords :
acoustic devices; dissolving; etching; gallium compounds; lanthanum compounds; silicon compounds; surface structure; H3PO4-H2O; LGS crystals; La3Ga5SiO14; TENSOSIM simulator; chemical etching; dissolution constants; mechanical microstructures; out-of-roundness profiles; surface profiles; wet etching; Acoustic waves; Anisotropic magnetoresistance; Chemicals; Crystal microstructure; Databases; Kinematics; Resonance; Shape; Surface topography; Wet etching;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.484
