• DocumentCode
    235609
  • Title

    A theoretical study on rate accelerator for Si CMP

  • Author

    Endou, Akira ; Suzuki, Shota ; Akatsuka, Tomohiko ; Sugai, Kazumi

  • Author_Institution
    CMP R&D Section, CMP Department, FUJIMI INCORPORATED R&D Center, Kakamigahara city, Gifu Prefecture 509-0109, Japan
  • fYear
    2014
  • fDate
    19-21 Nov. 2014
  • Firstpage
    124
  • Lastpage
    124
  • Abstract
    A theoretical analysis of the roles of rate accelerator for Si CMP processes is of paramount importance in the design of more effective slurries. In this study, the possible factors related to the removal rate of Si were analyzed by means of computational chemistry methods. As a result, it was found that there exists the relation between the ratios of the experimental removal rates and the ratios of the calculated bond strengths of Si-Si.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2014 International Conference on
  • Conference_Location
    Kobe, Japan
  • Print_ISBN
    978-1-4799-5556-5
  • Type

    conf

  • DOI
    10.1109/ICPT.2014.7017261
  • Filename
    7017261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235609