Reliability estimation model of IC´s interconnect based on uniform distribution of defects on a chip

The electromigration effect is still a dominating failure mechanism of interconnects in the deep-submicron and super deep-submicron scale. However, a defect, which exists throughout the IC manufacturing process, is another important factor affecting IC interconnection lifetime. When there is a defect on an interconnection, this interconnection´s lifetime is shortened because of the electromigration effect. In this paper, a new failure model of IC interconnection is proposed, based on analysis of the available estimation models of IC interconnect lifetime. Many factors, such as the sizes of the defect, wire width, wire length and so on, are considered in this new model. The simulation results show that the model is valid.