DocumentCode :
235611
Title :
FEOL post CMP cleaner development
Author :
Cuong Tran ; Medd, Steve ; Frye, Donald
Author_Institution :
Entegris, Tempe, AZ, USA
fYear :
2014
fDate :
19-21 Nov. 2014
Firstpage :
125
Lastpage :
128
Abstract :
Changes to the number and types of films exposed during cleaning and changes to slurries have promoted a new need for formulated cleans in the Front End of the Line (FEOL). Changes to the particles used in slurries have made many of the traditional pCMP cleaners ineffective for this process. Further, the ideal clean should be a one-step process. These changes are pushing companies to consider formulated cleans over commodities cleans. A formulated clean can remove particles and metal contamination all in one step while protecting the underlying thin films. We will show a path toward the development of these new cleaners.
Keywords :
MOSFET; chemical mechanical polishing; contamination; planarisation; semiconductor device manufacture; slurries; surface cleaning; thin film devices; FEOL; FinFET; chemical mechanical planarization; front end of the line; metal contamination; pCMP cleaners; postCMP cleaner; thin films; Cleaning; Films; Silicon; Silicon compounds; Slurries; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4799-5556-5
Type :
conf
DOI :
10.1109/ICPT.2014.7017262
Filename :
7017262
Link To Document :
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