DocumentCode :
2356142
Title :
High-voltage termination using enhanced surface doping
Author :
Clark, Lowell E. ; Davies, Robert B. ; Groenig, Paul J.
Author_Institution :
Motorola Semiconductor Products Sector
fYear :
1992
fDate :
1992
Firstpage :
86
Lastpage :
90
Keywords :
Breakdown voltage; Doping profiles; Manufacturing; P-n junctions; Poisson equations; Prediction algorithms; Semiconductor device doping; Silicon; Testing; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991242
Filename :
991242
Link To Document :
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