DocumentCode :
2356169
Title :
Formation of high ouality epitaxial layer for an improved GTO
Author :
Watanabe, M. ; Takahashi, Y. ; Yamada, O. ; Tagami, S. ; Kirihata, H.
Author_Institution :
Fuji Electric Corporate Research & Development, Ltd.
fYear :
1992
fDate :
1992
Firstpage :
98
Lastpage :
103
Keywords :
Annealing; Atmosphere; Boron; Epitaxial layers; Impurities; Particle beam optics; Stacking; Testing; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991244
Filename :
991244
Link To Document :
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