Title :
Next generation package-on-package solution to support wide IO and high bandwidth interface
Author :
Hung-Hsiang Cheng ; Chang-Chi Lee ; Ming-Feng Chung ; Po-Chih Pan ; Ping-Feng Yang ; Chi-Tsung Chiu ; Chih-Pin Hung ; Chen-Chao Wang
Author_Institution :
Adv. Semicond. Eng. Inc., Kaohsiung, Taiwan
Abstract :
A potential technology by substrate interposer enables high bandwidth and low power application processing devices of the future, because the demand of smart mobile products are driving for higher logic-to-memory bandwidth (BW) over 30 GB/s with lower power consumption and ultra-capacity of memory. This paper presents a new High Bandwidth Package-on-Package (HB-PoP) structure with substrate interposer to support 2-channel 64-bit LPDDR3 memory and demonstrate electrical performances including signal integrity (SI) and power integrity (PI). In addition, the thermal performance and warpage behavior of HB-PoPs structures are also better than conventional PoP. Utilizing the structures proposed by Advance Semiconductor Engineering (ASE) Inc., the package of Wide-IO memory can be realized by them as well.
Keywords :
integrated circuit packaging; low-power electronics; power consumption; thermal analysis; ASE; BW; HB-PoP structure; LPDDR3 memory; PI; SI; advance semiconductor engineering; electrical performance; high bandwidth interface; higher logic-to-memory bandwidth; low power application processing devices; memory ultracapacity; next generation package-on-package solution; potential technology; power consumption; power integrity; signal integrity; smart mobile product demand; substrate interposer; thermal performance; warpage behavior; wide IO memory; word length 64 bit; Analytical models; Bandwidth; Inductance; Mobile communication; Noise; Simulation; Substrates;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location :
Orlando, FL
DOI :
10.1109/ECTC.2014.6897594
