Title :
Full dynamic power diode model including temperature behavior for use in circuit simulators
Author :
Goebel, H. ; Hoffmann, K.
Author_Institution :
University of Bundeswehr Munich
Keywords :
Charge carriers; Circuit simulation; Differential equations; Doping; Integrated circuit modeling; Mathematical model; Semiconductor diodes; Space charge; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991249
