Title :
A first loss evaluation using a vertical SiC-JFET and a conventional Si-IGBT in the bidirectional matrix converter switch topology
Author :
Domes, D. ; Hofmann, W. ; Lutz, J.
Author_Institution :
Dept. of Electr. Machines & Drives, Chemnitz Univ. of Technol.
Abstract :
SiC (silicon carbide) is a material with outstanding properties for power semiconductor application. Beside research activities including different power semiconductor switch types, unipolar JFET devices for blocking voltage of more than 1200 V are applicable as samples promising switching loss reduction above all. In this paper the switching behaviour of these SiC-JFETs is compared to this of a similar conventional Si-IGBT regarding the conditions of the bidirectional matrix converter switch topology. Statements concerning the on-state losses is also discussed focusing the necessary reverse conducting capability of the JFET devices in the matrix converter switch topology
Keywords :
insulated gate bipolar transistors; junction gate field effect transistors; matrix convertors; network topology; power semiconductor switches; silicon compounds; switching convertors; IGBT; JFET devices; SiC; bidirectional matrix converter switch topology; loss evaluation; onstate losses; power semiconductor application; switching loss reduction; Bidirectional control; Circuit topology; Insulated gate bipolar transistors; Inverters; Matrix converters; Power semiconductor switches; Semiconductor diodes; Silicon carbide; Switching circuits; Voltage; Device application; Efficiency; IGBT; JFET; Matrix converter; SiC-device;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219281
