A 180MW, 450kV solid state modulator based on Press Pack IGBT technology

Author

Ortiz, G. ; Müsing, A. ; Biela, J. ; Bortis, D. ; Kolar, J.W.

Author_Institution

Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland

fYear

2010

fDate

23-27 May 2010

Firstpage

303

Lastpage

306

Abstract

A new solid state power modulator for free electron laser applications is studied. This modulator comprises a 4.5kV Press Pack IGBT module that can handle pulsed currents higher than 3kA. The reliability of this module concerning current distribution among the paralleled IGBT chips is studied, where the internal parasitic components and couplings causing the asymmetries are extracted by means of the Partial Element Equivalent Circuit method. Simulated waveforms showing the currents in each IGBT chip during switching transients are revised together with the dissipated losses for different pulse durations.

Keywords

current distribution; equivalent circuits; free electron lasers; insulated gate bipolar transistors; modulators; power semiconductor switches; current distribution; free electron laser applications; internal parasitic components; partial element equivalent circuit method; power 180 MW; press pack IGBT technology; pulsed currents; simulated waveforms; solid state modulator; switching transients; voltage 4.5 kV; voltage 450 kV; Conductors; Copper; Current distribution; Heat sinks; Insulated gate bipolar transistors; Modulation; Presses;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator and High Voltage Conference (IPMHVC), 2010 IEEE International

Conference_Location

Atlanta, GA

Print_ISBN

978-1-4244-7131-7

Type

conf

DOI

10.1109/IPMHVC.2010.5958353

Filename

5958353