High-k metal gate poly opening polish at 28nm technology polish rate and selective study

Author

Sie, W.S. ; Liu, Y.L. ; Chen, J.L. ; Hong, W.C. ; Huang, R.P. ; Huang, P.C. ; Li, Y.T. ; Lin, C.H. ; Kung, C.H. ; Lin, Y.M. ; Lin, R.G. ; Hsu, H.K. ; Wang, Oliver ; Lin, J.F.

Author_Institution

Dev. Div., United Microelectron. Corp. Adv. Technol., Tainan, Taiwan

fYear

2014

fDate

19-21 Nov. 2014

Firstpage

183

Lastpage

185

Abstract

A robust poly opening polish (POP) CMP for replacement metal gate (RMG) application has been developed to meet the criteria of High-k metal gate (HKMG) devices at 28nm technology node. From the previous performance of POP CMP, the uniformity and loading was an important factor of product with HKMG. The polish rate and selective of platen 2, which were key physical characters, was taken to study by recipe and film type tuning. As the results, the platen and head rotate speed (rpm) can influence the selective of SiN and oxide remove rate. In addition, the SiN remove rate was been changed by different slurry shelf life.

Keywords

chemical mechanical polishing; high-k dielectric thin films; nanoelectronics; silicon compounds; slurries; HKMG devices; POP CMP; RMG; SiN; chemical mechanical polishing; film type tuning; head rotate speed; high-k metal gate devices; high-k metal gate polyopening polish; oxide remove rate; replacement metal gate; size 28 nm; slurry shelf life; technology polish rate; Films; High K dielectric materials; Logic gates; Metals; Planarization; Silicon compounds; Slurries;

fLanguage

English

Publisher

ieee

Conference_Titel

Planarization/CMP Technology (ICPT), 2014 International Conference on

Conference_Location

Kobe

Print_ISBN

978-1-4799-5556-5

Type

conf

DOI

10.1109/ICPT.2014.7017275

Filename

7017275