DocumentCode :
2356553
Title :
Application of a new fabrication technique to GaAs SIThy using LPE
Author :
Tomita, A. ; Kamiya, T. ; Kimura, M. ; Tanaka, A. ; Sukegakva, T.
Author_Institution :
Shizuoka Univ.
fYear :
1992
fDate :
1992
Firstpage :
198
Lastpage :
201
Keywords :
Electron mobility; Epitaxial growth; Fabrication; Gallium arsenide; Impurities; Lattices; Low voltage; Photonic band gap; Thyristors; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991264
Filename :
991264
Link To Document :
بازگشت