DocumentCode :
2356609
Title :
A new junction termination technique for power devices: resurf LDMOS with SIPOS layers
Author :
Charitat, G. ; Bouanane, M.A. ; Rossel, P.
Author_Institution :
CNRS
fYear :
1992
fDate :
1992
Firstpage :
213
Lastpage :
216
Keywords :
Bipolar transistors; Conductivity; Diodes; Doping; Electric breakdown; Integral equations; Medium voltage; Numerical analysis; Poisson equations; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991268
Filename :
991268
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2356609
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