Title :
Optimization of 500V, P-channel VDMOS-LIGBT transistors
Author :
Parthasarathy, V. ; Chow, T.P.
Author_Institution :
Rensselaer Polytechnic Institute
Keywords :
Bipolar transistors; Charge carrier lifetime; Charge carrier processes; Conductivity; Doping; Fingers; Insulated gate bipolar transistors; MOSFET circuits; Particle measurements; Turning;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991277
