Title :
Simulation of a 700 V high-voltage device structure on a thin SOI - substrate bias effect on SOI devices
Author :
Matsudai, Tomoko ; Nakagawa, Akio
Author_Institution :
Toshiba R&D Center
Keywords :
Anodes; Breakdown voltage; Cathodes; Dielectric substrates; Diodes; Impurities; Isolation technology; Power integrated circuits; Semiconductor films; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991285
