DocumentCode :
2356996
Title :
Modeling and characterization of SIPOS passivated, high voltage, N- and P-channel lateral resurf type DMOSFETs
Author :
Sakai, T. ; So, K.C. ; Shen, Z. ; Chow, T.P.
Author_Institution :
Rensselaer Polytechnic Institute
fYear :
1992
fDate :
1992
Firstpage :
288
Lastpage :
292
Keywords :
Analytical models; Capacitance-voltage characteristics; Conductivity; Contact resistance; Impurities; Permittivity; Photonic band gap; Power integrated circuits; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991288
Filename :
991288
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2356996
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