Title :
A novel power MOSFET using drain trench technology
Author :
Vera, Eduardo S. ; Yamashita, Nobuhiko ; Yachi, Toshiaki
Author_Institution :
NTT Advanced Technology Corporation
Keywords :
Capacitance; Dielectric breakdown; Doping; Geometry; Laboratories; MOSFET circuits; Numerical simulation; Power MOSFET; Surface resistance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991290
