DocumentCode
2357056
Title
Effect of contact resistivities and interface properties on the performance of SiC power devices
Author
Wang, T.K. ; Chow, T.P. ; Brown, D.M. ; Ghezzo, M.
Author_Institution
Rensselaer Polytechnic Institute
fYear
1992
fDate
1992
Firstpage
303
Lastpage
308
Keywords
Contact resistance; FETs; Implants; Ohmic contacts; Photonic band gap; Schottky barriers; Semiconductor materials; Silicon carbide; Substrates; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991292
Filename
991292
Link To Document