Title :
High-voltage high-speed MESFETs using a standard GaAs digital IC process
Author :
Mok, Philip K T ; André, C. ; Salama, T.
Author_Institution :
University of Toronto
Keywords :
Breakdown voltage; Bridge circuits; Digital integrated circuits; Gallium arsenide; High speed integrated circuits; Implants; MESFET integrated circuits; Semiconductor materials; Substrates; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
DOI :
10.1109/ISPSD.1992.991293
