DocumentCode
2357086
Title
New dielectric isolation for high voltage power ICs by single silicon poly silicon direct bonding (SPSDB) technique
Author
Sugawara, Y. ; Inoue, Y. ; Ogawa, S. ; Kurita, S.
Author_Institution
Hitachi Ltd.
fYear
1992
fDate
1992
Firstpage
316
Lastpage
321
Keywords
Breakdown voltage; Dielectrics; Fabrication; Heat treatment; Parasitic capacitance; Power integrated circuits; Silicon; Temperature; Thermal conductivity; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type
conf
DOI
10.1109/ISPSD.1992.991294
Filename
991294
Link To Document