Title :
Effect of slurry temperature on removal characteristics in cadmium telluride CMP
Author :
Byeongcheol Shin ; Dasol Lee ; Eunjeong Park ; Haedo Jeong
Author_Institution :
Grad. Sch. of Mech. Eng., Pusan Nat. Univ., Busan, South Korea
Abstract :
Cadmium Telluride (CdTe), one of II-VI group compound semiconductors, was used as a material of X-Ray detector, since it has good features of high absorption rate and high conversion efficiency of X-Ray, resulting from its excellent electric properties. However, a rough surface of the CdTe thin-film causes a delay of electric speed and current concentration to the uneven part of the surface, resulting in making electric uniformity worse. Therefore, it is necessary to improve the surface roughness of the CdTe X-Ray detector which is possible to achieve a higher electric uniformity, a shorter signal delay, and more clear images.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; chemical mechanical polishing; delays; slurries; surface roughness; CdTe; X-ray detector material; cadmium telluride CMP; current concentration; electric speed delay; electric uniformity; removal characteristics; slurry temperature; surface roughness; Chemicals; Educational institutions; Rough surfaces; Slurries; Surface roughness; Surface treatment; Temperature;
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4799-5556-5
DOI :
10.1109/ICPT.2014.7017304
