DocumentCode :
235712
Title :
CMP material development for ceria-based applications
Author :
Tseng, Ricky ; Tsai, David ; Tung, Kevin ; DeGroot, Marty W. ; Bainian Qian ; Youngrae Park ; Buley, Todd W.
Author_Institution :
Rohm & Haas Electron. Mater. Asia Pacific Co. Ltd., Jhunan, Taiwan
fYear :
2014
fDate :
19-21 Nov. 2014
Firstpage :
306
Lastpage :
310
Abstract :
New polyurethane pad materials have been developed for chemical mechanical planarization using ceria-based slurries. The optimization of material properties, tailored for effective texture generation with current conditioning schemes, has resulted in improvements in both removal rate stability and defectivity versus conventional CMP pads. Further developments in polymer engineering have led to the demonstration of new polyurethane materials exhibiting up to 30% removal rate increase and lower defectivity versus the industry standard pad in ceria applications.
Keywords :
chemical mechanical polishing; optimisation; polymers; semiconductor devices; CMP material development; ceria-based applications; ceria-based slurries; chemical mechanical planarization; material properties optimization; polymer engineering; polyurethane pad materials; removal rate stability; Planarization; Polymers; Rough surfaces; Slurries; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4799-5556-5
Type :
conf
DOI :
10.1109/ICPT.2014.7017306
Filename :
7017306
Link To Document :
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