DocumentCode
235712
Title
CMP material development for ceria-based applications
Author
Tseng, Ricky ; Tsai, David ; Tung, Kevin ; DeGroot, Marty W. ; Bainian Qian ; Youngrae Park ; Buley, Todd W.
Author_Institution
Rohm & Haas Electron. Mater. Asia Pacific Co. Ltd., Jhunan, Taiwan
fYear
2014
fDate
19-21 Nov. 2014
Firstpage
306
Lastpage
310
Abstract
New polyurethane pad materials have been developed for chemical mechanical planarization using ceria-based slurries. The optimization of material properties, tailored for effective texture generation with current conditioning schemes, has resulted in improvements in both removal rate stability and defectivity versus conventional CMP pads. Further developments in polymer engineering have led to the demonstration of new polyurethane materials exhibiting up to 30% removal rate increase and lower defectivity versus the industry standard pad in ceria applications.
Keywords
chemical mechanical polishing; optimisation; polymers; semiconductor devices; CMP material development; ceria-based applications; ceria-based slurries; chemical mechanical planarization; material properties optimization; polymer engineering; polyurethane pad materials; removal rate stability; Planarization; Polymers; Rough surfaces; Slurries; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Planarization/CMP Technology (ICPT), 2014 International Conference on
Conference_Location
Kobe
Print_ISBN
978-1-4799-5556-5
Type
conf
DOI
10.1109/ICPT.2014.7017306
Filename
7017306
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