DocumentCode :
2357136
Title :
Power MOSFET analysis/optimization for cryogenic operation including the effect of degradation in breakdown voltage
Author :
Singh, Ranbir ; Baliga, B. Jayant
Author_Institution :
North Carolina State University
fYear :
1992
fDate :
1992
Firstpage :
339
Lastpage :
344
Keywords :
Cryogenics; Degradation; High temperature superconductors; MOSFET circuits; Power MOSFET; Silicon; Switched-mode power supply; Temperature dependence; Thermal conductivity; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1992. ISPSD '92. Proceedings of the 4th International Symposium on
Type :
conf
DOI :
10.1109/ISPSD.1992.991298
Filename :
991298
Link To Document :
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