Title :
Thermal modelling of multifinger GaAs/GaN FETs using SPICE
Author :
Tarazi, Jabra ; Parker, Anthony E. ; Schwitter, Bryan ; Mahon, Simon J.
Author_Institution :
Sydney Design Centre, Macom, Sydney, NSW, Australia
Abstract :
A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.
Keywords :
III-V semiconductors; finite element analysis; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor junctions; temperature measurement; 3D FEM simulation; GMRT; GaAs; GaN; HEMTs; SPICE; electric current flow; finite element model; gate metal resistance thermometry; heat flow; high electron mobility transistors; junction temperature; multifinger FETs; thermal model; Contacts; Field effect transistors; Gallium nitride; Logic gates; Reliability engineering; Substrates; Channel temperature; GaAs; GaN; junction temperature; thermal modelling;
Conference_Titel :
Microwave Symposium (AMS), 2014 1st Australian
Conference_Location :
Melbourne, VIC
DOI :
10.1109/AUSMS.2014.7017339
