Thermal modelling of multifinger GaAs/GaN FETs using SPICE

Author

Tarazi, Jabra ; Parker, Anthony E. ; Schwitter, Bryan ; Mahon, Simon J.

Author_Institution

Sydney Design Centre, Macom, Sydney, NSW, Australia

fYear

2014

fDate

26-27 June 2014

Firstpage

7

Lastpage

8

Abstract

A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.

Keywords

III-V semiconductors; finite element analysis; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor junctions; temperature measurement; 3D FEM simulation; GMRT; GaAs; GaN; HEMTs; SPICE; electric current flow; finite element model; gate metal resistance thermometry; heat flow; high electron mobility transistors; junction temperature; multifinger FETs; thermal model; Contacts; Field effect transistors; Gallium nitride; Logic gates; Reliability engineering; Substrates; Channel temperature; GaAs; GaN; junction temperature; thermal modelling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (AMS), 2014 1st Australian

Conference_Location

Melbourne, VIC

Type

conf

DOI

10.1109/AUSMS.2014.7017339

Filename

7017339