DocumentCode :
2357502
Title :
Evolution of electrical parameters of dielectric-less ohmic RF-MEMS switches during continuous actuation stress
Author :
Tazzoli, A. ; Autizi, E. ; Barbato, M. ; Meneghesso, G. ; Solazzi, F. ; Farinelli, P. ; Giacomozzi, F. ; Iannacci, J. ; Margesin, B. ; Sorrentino, R.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
343
Lastpage :
346
Abstract :
The evolution of the main electrical parameters of dielectric-less ohmic RF-MEMS cantilever-based switches during continuous actuation stress was investigated in this work. Thanks to different designs, the main electrical parameters changes were attributed to a charging phenomena of the oxide over the substrate near the polysilicon actuator, leading to both narrowing and shifting of traditional hysteresis-like curves. Recovery procedures were also analyzed. Furthermore, the breakdown occurrence was also investigated, supported by both emission microscope and optical images.
Keywords :
elemental semiconductors; microactuators; microswitches; microwave switches; semiconductor device breakdown; silicon; Si; breakdown occurrence; cantilever-based switches; continuous actuation stress; dielectric-less ohmic RF-MEMS switches; electrical parameters; emission microscope image; optical image; polysilicon actuator; traditional hysteresis-like curve shifting; Actuators; Dielectric substrates; Electric breakdown; Hysteresis; Lead compounds; Optical microscopy; Radiofrequency microelectromechanical systems; Stimulated emission; Stress; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
ISSN :
1930-8876
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2009.5331307
Filename :
5331307
Link To Document :
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