Gate oxide rupture localization by photon emission microscopy with the combination of Lock-in IR-OBIRCH

Author

Chunlei Wu ; Suying Yao

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

358

Lastpage

361

Abstract

There are many failure analysis cases are induced by the gate oxide rupture. It is a common and important failure mechanism in failure analysis. Photon emission microscopy with the combination of Lock-in IR-OBIRCH are very effective to localize the gate oxide rupture in MOS transistor, which can decrease analysis cycle time and improve success rates remarkably. In this paper, some different cases are presented to show how to locate the gate oxide rupture in MOS transistor accurately and quickly by photon emission microscopy with the combination of Lock-in IR-OBIRCH.

Keywords

MOSFET; OBIC; failure analysis; fracture; photoelectron microscopy; MOS transistor; analysis cycle time; failure analysis; failure mechanism; gate oxide rupture localization; lock-in IR-OBIRCH combination; lock-in infrared optical beam induced resistance change; photon emission microscopy; success rate improvement; Electric breakdown; Failure analysis; Integrated circuits; Layout; Logic gates; MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the

Conference_Location

Marina Bay Sands

ISSN

1946-1542

Print_ISBN

978-1-4799-3931-2

Type

conf

DOI

10.1109/IPFA.2014.6898121

Filename

6898121