Title :
Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width
Author :
Wen-Teng Chang ; Li-Gong Cin ; Wen-Kuan Yeh ; Po-Ying Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fDate :
June 30 2014-July 4 2014
Abstract :
The effects of hot carrier injection on double-gate FinFETs with fin widths (Wfin) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow Wfin exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.
Keywords :
MOSFET; hot carriers; back biasing double-gate FinFET; current tuning range; drive current; hot carrier injection; negative back bias; positive back bias; size 10 nm; size 25 nm; Decision support systems; Failure analysis; Integrated circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898122
